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Preliminary Datasheet
RJK03E2DNS
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.9 m typ. (at VGS = 10 V) Pb-free Halogen-free REJ03G1904-0200 Rev.2.00 Apr 06, 2010
Outline
RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8)
5678 DDDD
5 6 78
4 G
4321
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
SSS 123
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 30 20 16 64 16 8 6.4 12.5 10.0 150 -55 to +150 Unit V V A A A A mJ W C/W C C
REJ03G1904-0200 Rev.2.00 Apr 06, 2010
Page 1 of 6
RJK03E2DNS
Preliminary
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 -- -- 1.2 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 6.9 9.1 33 1100 157 78 1.2 7.3 3.1 1.8 8.6 3.9 33 4.7 0.82 13 Max -- 0.1 1 2.5 9.0 12.7 -- 1540 -- -- 2.4 -- -- -- -- -- -- -- 1.07 -- Unit V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = 20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 8 A, VGS = 10 V Note4 ID = 8 A, VGS = 4.5 V Note4 ID = 8 A, VDS = 5 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 16 A VGS = 10 V, ID = 8 A VDD 10 V RL = 1.25 Rg = 4.7 IF = 16 A, VGS = 0 Note4 IF =16 A, VGS = 0 diF/ dt = 100 A/ s
REJ03G1904-0200 Rev.2.00 Apr 06, 2010
Page 2 of 6
RJK03E2DNS
Preliminary
Main Characteristics
Power vs. Temperature Derating
20 100
Maximum Safe Operation Area
Channel Dissipation Pch (W)
1m
15
Drain Current ID (A)
s
10 PW = 10 ms 1
DC e Op
10
5
Operation in this area is 0.1 limited by RDS(on) Tc = 25 C
ra tio n
0
50
100
150
200
0.01 1 shot Pulse 0.1 1
10
100
Case Temperature Tc (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
20 4.5 V 3.1 V 10 V 20
Typical Transfer Characteristics
VDS = 5 V Pulse Test
Pulse Test
2.9 V
Drain Current ID (A)
12 2.7 V
Drain Current ID (A)
16
16
12
8
8
4
VGS = 2.5 V
4
Tc = 75C
25C -25C
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS(on) (mV)
400
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
100
Pulse Test
30
Pulse Test
300
200
10
VGS = 4.5 V
10 V
100
ID = 10 A
5A
2A
3
0
4
8
12
16
20
1 1
3
10
30
100
Gate to Source Voltage VGS (V)
Drain Current ID (A)
REJ03G1904-0200 Rev.2.00 Apr 06, 2010
Page 3 of 6
RJK03E2DNS
Static Drain to Source on State Resistance vs. Temperature
40 Pulse Test 10000 3000
Preliminary
Typical Capacitance vs. Drain to Source Voltage
Capacitance C (pF)
32
1000 300
Ciss
24 ID = 2 A, 5 A, 10 A 16 VGS = 4.5 V 8 10 V 0 -25 0 25 50 2 A, 5 A, 10 A
Coss 100 30 10 Crss V0 = 0 GS f = 1 MHz 10 20 30
75
100 125 150
Case Temperature Tc (C)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)
50
Reverse Drain Current vs. Source to Drain Voltage
20 20
Reverse Drain Current IDR (A)
ID = 16 A
10 V 16 5V
Pulse Test
40 VGS 30 VDS VDD = 25 V 10 V
16
12
12
20
8
8 VGS = 0, -5 V
10
VDD = 25 V 10 V 0 5 10 15 20
4
4
0
0 25
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nc)
Source to Drain Voltage VSD (V)
Maximum Avalanche Energy vs. Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
10
8
6
4
2 0 25
50
75
100
125
150
Channel Temperature Tch (C)
REJ03G1904-0200 Rev.2.00 Apr 06, 2010
Page 4 of 6
RJK03E2DNS
Normalized Transient Thermal Impedance vs. Pulse Width
3
Preliminary
1
D=1 0.5
0.3
0.2
0.1
0.1
0.05
0.03
2 0.0 1 e 0 uls 0. tp ho 1s
PDM PW T
D=
PW T
0.01 1m 10 m 100 m 1 10
Pulse Width PW (S) Avalanche Test Circuit Avalanche Waveform
1 2 L * IAP2 * VDSS VDSS - VDD V(BR)DSS IAP Rg D. U. T VDD VDS
VDS Monitor
L IAP Monitor
EAR =
ID
Vin 15 V 0 VDD
Switching Time Test Circuit
Vin Monitor D.U.T. Rg RL VDS = 10 V Vin Vout Vin 10 V Vout Monitor
Switching Time Waveform
90% 10% 10% 10%
90% td(on) tr
90% td(off) tf
REJ03G1904-0200 Rev.2.00 Apr 06, 2010
Page 5 of 6
RJK03E2DNS
Preliminary
Package Dimensions
Package Name HWSON-8 JEITA Package Code P-HWSON8-2.9x3.1-0.65 RENESAS Code PWSN0008JB-A Previous Code
MASS[Typ.] TBD
3.3 0.1
+0.15 -0.1
3.3 0.1
0.1 Min
2.9 0.1
1.55 0.2
0.4
0.8 Max
2.25 0.2
(2.55)
+0.15 -0.1
Ordering Information
Part No. RJK03E2DNS-00-J5 Quantity 5000 pcs Taping Shipping Container
REJ03G1904-0200 Rev.2.00 Apr 06, 2010
0.04Max 0Min Stand-off
3.1 0.1
0.4
0.575 Typ
0.65 Typ
0.22 Typ
0.32 0.08
Page 6 of 6
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